08698226 is referenced by 11 patents and cites 7 patents.

Disclosed herein is a device comprising a source region, a drain region and a gate layer; the source region, the drain region and the gate layer being disposed on a semiconductor host; the gate layer being disposed between source and drain regions; the gate layer comprising a first gate-insulator layer; a gate layer comprising carbon nanotubes and/or graphene. Disclosed herein too is a method comprising disposing a source region, a drain region and a gate layer on a semiconductor host; the gate layer being disposed between the source region and the drain region; the gate layer comprising carbon nanotubes and/or graphene.

Title
Semiconductor devices, methods of manufacture thereof and articles comprising the same
Application Number
12/533770
Publication Number
8698226 (B2)
Application Date
July 31, 2009
Publication Date
April 15, 2014
Inventor
Fotios Papadimitrakopoulos
West Hartford
CT, US
Faquir C Jain
Storrs
CT, US
Agent
Cantor Colburn
Assignee
University of Connecticut
CT, US
IPC
H01L 29/788
View Original Source