08583111 is referenced by 35 patents and cites 581 patents.

An RF switch circuit and method for switching RF signals that may be fabricated using common integrated circuit materials such as silicon, particularly using insulating substrate technologies. The RF switch includes switching and shunting transistor groupings to alternatively couple RF input signals to a common RF node, each controlled by a switching control voltage (SW) or its inverse (SW_), which are approximately symmetrical about ground. The transistor groupings each comprise one or more insulating gate FET transistors connected together in a “stacked” series channel configuration, which increases the breakdown voltage across the series connected transistors and improves RF switch compression. A fully integrated RF switch is described including control logic and a negative voltage generator with the RF switch elements. In one embodiment, the fully integrated RF switch includes an oscillator, a charge pump, CMOS logic circuitry, level-shifting and voltage divider circuits, and an RF buffer circuit.

Title
Switch circuit and method of switching radio frequency signals
Application Number
12/980161
Publication Number
8583111 (B2)
Application Date
December 28, 2010
Publication Date
November 12, 2013
Inventor
James S Cable
Del Mar
CA, US
Mark L Burgener
San Diego
CA, US
Agent
Martin J Jaquez Esq
Jaquez & Associates
Assignee
Peregrine Semiconductor Corporation
CA, US
IPC
H04M 1/00
H01L 29/76
H04B 1/28
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