08569152 is referenced by 20 patents and cites 5 patents.

A method for making dual-epi FinFETs is described. The method includes adding a first epitaxial material to an array of fins. The method also includes covering at least a first portion of the array of fins using a first masking material and removing the first epitaxial material from an uncovered portion of the array of fins. Adding a second epitaxial material to the fins in the uncovered portion of the array of fins is included in the method. The method also includes covering a second portion of the array of fins using a second masking material and performing a directional etch using the first masking material and the second masking material. Apparatus and computer program products are also described.

Title
Cut-very-last dual-epi flow
Application Number
13/487413
Publication Number
8569152 (B1)
Application Date
June 4, 2012
Publication Date
October 29, 2013
Inventor
Tenko Yamashita
Schenectady
NY, US
Theodorus E Standaert
Clifton Park
NV, US
Stefan Schmitz
Malta
NY, US
Shom Ponoth
Clifton Park
NY, US
Nicolas Loubet
Guilderland
NY, US
Balasubramanian S Haran
Watervliet
NY, US
Kangguo Cheng
Schenectady
NY, US
Huiming Bu
Millwood
NY, US
Veeraraghavan S Basker
Schenectady
NY, US
Agent
Harrington & Smith
Assignee
International Business Machines Corporation
NY, US
IPC
H01L 21/20
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