08479083 is referenced by 13 patents and cites 14 patents.

Integrated circuit memory devices include an array of nonvolatile N-bit memory cells, where N is an integer greater than one. Control circuitry is also provided to reliably read data from the N-bit memory cells. This control circuitry, which is electrically coupled to the array, is configured to determine, among other things, a value of at least one bit of data stored in a selected N-bit memory cell in the array. This is done by decoding at least one hard data value and a plurality of soft data values (e.g., 6 data values) read from the selected N-bit memory cell using a corresponding plurality of unequal read voltages applied to the selected N-bit memory cell during a read operation.

Title
Flash memory devices having multi-bit memory cells therein with improved read reliability
Application Number
12/967969
Publication Number
8479083 (B2)
Application Date
December 14, 2010
Publication Date
July 2, 2013
Inventor
Jinman Han
Seongnam-si
KR
Donghyuk Chae
Seoul
KR
Agent
Myers Bigel Sibley & Sajovec P A
Assignee
Samsung Electronics
KR
IPC
G06F 11/00
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