08420459 is referenced by 29 patents and cites 5 patents.

A fin field-effect-transistor fabricated by forming a dummy fin structure on a semiconductor substrate. A dielectric layer is formed on the semiconductor substrate. The dielectric layer surrounds the dummy fin structure. The dummy fin structure is removed to form a cavity within the dielectric layer. The cavity exposes a portion of the semiconductor substrate thereby forming an exposed portion of the semiconductor substrate within the cavity. A dopant is implanted into the exposed portion of the semiconductor substrate within the cavity thereby creating a dopant implanted exposed portion of the semiconductor substrate within the cavity. A semiconductor layer is epitaxially grown within the cavity atop the dopant implanted exposed portion of the semiconductor substrate.

Title
Bulk fin-field effect transistors with well defined isolation
Application Number
13/277956
Publication Number
8420459 (B1)
Application Date
October 20, 2011
Publication Date
April 16, 2013
Inventor
Tenko Yamashita
Schenectady
NY, US
Theodorus E Standaert
Clifton Park
NY, US
Shom Ponoth
Clifton Park
NY, US
Balasubramanian S Haran
Watervliet
NY, US
Kangguo Cheng
Schenectady
NY, US
Agent
Fleit Gibbons Gutman Bongini & Bianco PL
Jose Gutman
Assignee
International Business Machines Corporation
NY, US
IPC
H01L 21/84
H01L 21/00
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