08310866 is referenced by 4 patents and cites 9 patents.

A thermally-assisted MRAM structure which is programmable at a writing mode operating temperature is presented and includes an anti-ferromagnet, an artificial anti-ferromagnet, a barrier layer, and a free magnetic layer. The anti-ferromagnet is composed of a material having a blocking temperature Tb which is lower than the writing mode operating temperature of the magnetic random access memory structure. The artificial anti-ferromagnet is magnetically coupled to the anti-ferromagnet, and includes first and second magnetic layers, and a coupling layer interposed therebetween, the first and second magnetic layers having different Curie point temperatures. The barrier layer is positioned to be between the second magnetic layer and the free magnetic layer.

Title
MRAM device structure employing thermally-assisted write operations and thermally-unassisted self-referencing operations
Application Number
12/168671
Publication Number
8310866 (B2)
Application Date
July 7, 2008
Publication Date
November 13, 2012
Inventor
Richard Ferrant
Esquibien
FR
Ulrich Klostermann
Munich
DE
Rainer Leuschner
Regensburg
DE
Assignee
ALTIS Semiconductor SNC
FR
Qimonda
DE
IPC
H01L 21/00
G11C 7/00
G11C 11/02
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