08237252 is referenced by 7 patents and cites 15 patents.

A semiconductor device is made by forming a first thermally conductive layer over a first surface of a semiconductor die. A second surface of the semiconductor die is mounted to a sacrificial carrier. An encapsulant is deposited over the first thermally conductive layer and sacrificial carrier. The encapsulant is planarized to expose the first thermally conductive layer. A first insulating layer is formed over the second surface of the semiconductor die and a first surface of the encapsulant. A portion of the first insulating layer over the second surface of the semiconductor die is removed. A second thermally conductive layer is formed over the second surface of the semiconductor die within the removed portion of the first insulating layer. An electrically conductive layer is formed within the insulating layer around the second thermally conductive layer. A heat sink can be mounted over the first thermally conductive layer.

Title
Semiconductor device and method of embedding thermally conductive layer in interconnect structure for heat dissipation
Application Number
12/507130
Publication Number
8237252 (B2)
Application Date
July 22, 2009
Publication Date
August 7, 2012
Inventor
Linda Pei Ee Chua
Singapore
SG
Byung Tai Do
Singapore
SG
Reza A Pagaila
Singapore
SG
Agent
Patent Law Group Atkins & Associates P C
Robert D Atkins
Assignee
STATS ChipPAC
SG
IPC
H01L 23/52
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