08183107 is referenced by 102 patents and cites 16 patents.

Semiconductor devices are formed with reduced variability between close proximity resistors, improved end resistances, and reduced random dopant mismatch. Embodiments include ion implanting a dopant, such as B, at a relatively high dosage, e.g. about 4 to about 6 keV, and at a relatively low implant energy, e.g., about 1.5 to about 2E15/cm2.

Title
Semiconductor devices with improved local matching and end resistance of RX based resistors
Application Number
12/473074
Publication Number
8183107 (B2)
Application Date
May 27, 2009
Publication Date
May 22, 2012
Inventor
Andreas Kurz
Dresden
DE
James F Buller
Austin
TX, US
Kaveri Mathur
Austin
TX, US
Agent
Ditthavong Mori & Steiner P C
Assignee
Globalfoundries
KY
IPC
H01L 21/8232
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