08174067 is referenced by 10 patents and cites 220 patents.

Exemplary power semiconductor devices with features providing increased breakdown voltage and other benefits are disclosed.

Title
Trench-based power semiconductor devices with increased breakdown voltage characteristics
Application Number
12/417586
Publication Number
8174067 (B2)
Application Date
April 2, 2009
Publication Date
May 8, 2012
Inventor
Dean E Probst
West Jordan
UT, US
Daniel Calafut
San Jose
CA, US
Joseph A Yedinak
Mountain Top
PA, US
Agent
Kilpatrick Townsend & Stockton
Assignee
Fairchild Semiconductor Corporation
ME, US
IPC
H01L 29/66
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