08159040 is referenced by 7 patents and cites 7 patents.

A semiconductor structure and a method for fabricating the semiconductor structure provide a field effect device located and formed upon an active region of a semiconductor substrate and at least one of a fuse structure, an anti-fuse structure and a resistor structure located and formed at least in part simultaneously upon an isolation region laterally separated from the active region within the semiconductor substrate. The field effect device includes a gate dielectric comprising a high dielectric constant dielectric material and a gate electrode comprising a metal material. The at least one of the fuse structure, anti-fuse structure and resistor structure includes a pad dielectric comprising the same material as the gate dielectric, and optionally, also a fuse, anti-fuse or resistor that may comprise the same metal material as the gate electrode.

Title
Metal gate integration structure and method including metal fuse, anti-fuse and/or resistor
Application Number
12/119526
Publication Number
8159040 (B2)
Application Date
May 13, 2008
Publication Date
April 17, 2012
Inventor
Hongwen Yan
Somers
NY, US
Ping Chuan Wang
Hopewell Junction
NY, US
Norman Whitelaw Robson
Hopewell Junction
NY, US
Kenneth Jay Stein
Sandy Hook
CT, US
John Matthew Safran
Wappingers Falls
NY, US
Robert Mark Rassel
Colchester
VT, US
Dan Moy
Bethel
CT, US
Chandrasekharan Kothandaraman
Hopewell Junction
NY, US
Deok kee Kim
Bedford Hills
NY, US
Herbert Lei Ho
New Windsor
NY, US
Zhong Xiang He
Essex Junction
VT, US
Ephrem G Gebreselasie
South Burlington
VT, US
Ebenezer E Eshun
Newburgh
NY, US
Douglas D Coolbaugh
Highland
NY, US
Agent
Yuanmin Cai
Scully Scott Murphy & Presser P C
Assignee
International Business Machines Corporation
NY, US
IPC
H01L 29/00
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