08143124 is referenced by 110 patents and cites 396 patents.

A method of manufacturing a semiconductor device having a charge control trench and an active control trench with a thick oxide bottom includes forming a drift region, a well region extending above the drift region, an active trench extending through the well region and into the drift region, a charge control trench extending deeper into the drift region than the active trench, an oxide film that fills the active trench, the charge control trench and covers a top surface of the substrate, an electrode in the active trench, and source regions. The method also includes etching the oxide film off the top surface of the substrate and inside the active trench to leave a substantially flat layer of thick oxide having a target thickness at the bottom of the active trench.

Title
Methods of making power semiconductor devices with thick bottom oxide layer
Application Number
12/32599
Publication Number
8143124 (B2)
Application Date
February 15, 2008
Publication Date
March 27, 2012
Inventor
Debra S Woolsey
Draper
UT, US
Christopher B Kocon
Plains
PA, US
Bruce D Marchant
Murray
UT, US
Gordon K Madson
Riverton
UT, US
James J Murphy
South Jordan
UT, US
Robert Herrick
Lehi
UT, US
Becky Losee
Cedar Hills
UT, US
Babak S Sani
Oakland
CA, US
Peter H Wilson
Wrightwood
CA, US
Steven P Sapp
Felton
CA, US
Dean E Probst
West Jordan
UT, US
Alan Elbanhawy
Hollister
CA, US
Ashok Challa
Sandy
UT, US
Agent
Kilpatrick Townsend & Stockton
Assignee
Fairchild Semiconductor Corporation
ME, US
IPC
H01L 21/336
H01L 29/78
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