08129787 is referenced by 50 patents and cites 105 patents.

A method and apparatus for use in improving the linearity characteristics of MOSFET devices using an accumulated charge sink (ACS) are disclosed. The method and apparatus are adapted to remove, reduce, or otherwise control accumulated charge in SOI MOSFETs, thereby yielding improvements in FET performance characteristics. In one exemplary embodiment, a circuit having at least one SOI MOSFET is configured to operate in an accumulated charge regime. An accumulated charge sink, operatively coupled to the body of the SOI MOSFET, eliminates, removes or otherwise controls accumulated charge when the FET is operated in the accumulated charge regime, thereby reducing the nonlinearity of the parasitic off-state source-to-drain capacitance of the SOI MOSFET. In RF switch circuits implemented with the improved SOI MOSFET devices, harmonic and intermodulation distortion is reduced by removing or otherwise controlling the accumulated charge when the SOI MOSFET operates in an accumulated charge regime.

Title
Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink
Application Number
13/53211
Publication Number
8129787 (B2)
Application Date
March 22, 2011
Publication Date
March 6, 2012
Inventor
Mark L Burgener
San Diego
CA, US
Robert B Welstand
San Diego
CA, US
George P Imthurn
San Diego
CA, US
Clint L Kemerling
Escondido
CA, US
Dylan J Kelly
San Diego
CA, US
Michael A Stuber
Carlsbad
CA, US
Christopher N Brindle
Poway
CA, US
Agent
Martin J Jaquez Esq
Jaquez & Associates
Assignee
Peregrine Semiconductor Corporation
CA, US
IPC
H01L 27/12
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