08125049 is referenced by 1 patents and cites 23 patents.

A capacitor structure includes a semiconductor substrate; a first capacitor plate positioned on the semiconductor substrate, the first capacitor plate including a polysilicon structure having a surrounding spacer; a silicide layer formed in a first portion of an upper surface of the first capacitor plate; a capacitor dielectric layer formed over a second portion of the upper surface of the first capacitor plate and extending laterally beyond the spacer to contact the semiconductor substrate; a contact in an interlayer dielectric (ILD), the contact contacting the silicide layer and a first metal layer over the ILD; and a second capacitor plate over the capacitor dielectric layer, wherein a metal-insulator-metal (MIM) capacitor is formed by the first capacitor plate, the capacitor dielectric layer and the second capacitor plate and a metal-insulator-semiconductor (MIS) capacitor is formed by the second capacitor plate, the capacitor dielectric layer and the semiconductor substrate.

Title
MIM capacitor structure in FEOL and related method
Application Number
12/618830
Publication Number
8125049 (B2)
Application Date
November 16, 2009
Publication Date
February 28, 2012
Inventor
Anthony K Stamper
Williston
VT, US
Robert M Rassel
Colchester
VT, US
Ebenezer E Eshun
Newburgh
NY, US
Douglas D Coolbaugh
Highland
NY, US
Agent
Hoffman Warnick
David Cain
Assignee
International Business Machines Corporation
NY, US
IPC
H01L 27/07
H01L 27/06
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