08063413 is referenced by 3 patents and cites 5 patents.

A semiconductor structure is provided. The semiconductor structure includes one or more III-IV material-based semiconductor layers. A tensile-strained Ge layer is formed on the one or more a III-IV material-based semiconductor layers. The tensile-strained Ge layer is produced through lattice-mismatched heteroepitaxy on the one or more a III-IV material-based semiconductor layers.

Title
Tensile strained GE for electronic and optoelectronic applications
Application Number
12/265976
Publication Number
8063413 (B2)
Application Date
November 6, 2008
Publication Date
November 22, 2011
Inventor
Eugene A Fitzgerald
Windham
NH, US
Minjoo L Lee
Hamden
CT, US
Yu Bai
Cambridge
MA, US
Agent
Gesmer Updegrove
Assignee
Massachusetts Institute of Technology
MA, US
IPC
H01L 29/15
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