08053829 is referenced by 151 patents and cites 3 patents.

Nonvolatile memory devices and methods of manufacturing nonvolatile memory devices are provided. The method includes patterning a bulk substrate to form an active pillar; forming a charge storage layer on a side surface of active pillar; and forming a plurality of gates connected to the active pillar, the charge storage layer being disposed between the active pillar and the gates. Before depositing a gate, a bulk substrate is etched using a dry etching to form a vertical active pillar which is in a single body with a semiconductor substrate.

Title
Methods of fabricating nonvolatile memory devices
Application Number
12/635098
Publication Number
8053829 (B2)
Application Date
December 10, 2009
Publication Date
November 8, 2011
Inventor
Jung Ho Kim
Gyeonggi-do
KR
Jong Hyuk Kang
Gyeonggi-do
KR
Yong Hoon Son
Gyeonggi-do
KR
Seungwoo Choi
Seoul
KR
Jongwook Lee
Gyeonggi-do
KR
Daelok Bae
Seoul
KR
Pil Kyu Kang
Gyeonggi-do
KR
Agent
Myers Bigel Sibley & Sajovec
Assignee
Samsung Electronics
KR
IPC
H01L 29/792
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