08048791 is referenced by 104 patents and cites 7 patents.

Methods for forming a semiconductor device comprising a semiconductor substrate are provided. In accordance with an exemplary embodiment, a method comprises forming a channel layer overlying the semiconductor substrate, forming a channel capping layer having a first surface overlying the channel layer, oxidizing the first surface of the channel capping layer, and depositing a high-k dielectric layer overlying the channel capping layer.

Title
Method of forming a semiconductor device
Application Number
12/390907
Publication Number
8048791 (B2)
Application Date
February 23, 2009
Publication Date
November 1, 2011
Inventor
Kisik Choi
Hopewell Junction
NY, US
George Kluth
Hopewell Junction
NY, US
Ying H Tsang
Newburgh
NY, US
Richard J Carter
Hopewell Junction
NY, US
Michael Hargrove
Clinton Corners
NY, US
Agent
Ingrassia Fisher & Lorenz P C
Assignee
GLOBALFOUNDRIES
KY
IPC
H01L 21/4763
H01L 21/3205
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