08026147 is referenced by 1 patents and cites 8 patents.

Provided is a method of fabricating a semiconductor microstructure, the method including forming a lower material layer on a semiconductor substrate, the lower material layer including a nitride of a Group III-element; forming a mold material layer on the lower material layer; forming an etching mask on the mold material layer, the etching mask being for forming a structure in the mold material layer; anisotropic-etching the mold material layer and the lower material layer by using the etching mask; and isotropic-etching the mold material layer and the lower material layer.

Title
Method of fabricating a semiconductor microstructure
Application Number
12/856262
Publication Number
8026147 (B2)
Application Date
August 13, 2010
Publication Date
September 27, 2011
Inventor
Eun kyung Baek
Suwon-si
KR
Eunkee Hong
Seongnam-si
KR
Kyung moon Byun
Seoul
KR
Yongsoon Choi
Yongin-si
KR
Agent
Myers Bigel Sibley & Sajovec P A
Assignee
Samsung Electronics
KR
IPC
H01L 21/20
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