08004024 is referenced by 90 patents and cites 29 patents.

A transistor. The transistor including: a well region in a substrate; a gate dielectric layer on a top surface of the well region; a polysilicon gate electrode on a top surface of the gate dielectric layer; spacers formed on opposite sidewalls of the polysilicon gate electrode; source/drain regions formed on opposite sides of the polysilicon gate electrode in the well region; a first doped region in the polysilicon gate electrode, the first doped region extending into the polysilicon gate electrode from a top surface of the polysilicon gate electrode; and a buried second doped region in the polysilicon gate electrode.

Title
Field effect transistor
Application Number
12/348404
Publication Number
8004024 (B2)
Application Date
January 5, 2009
Publication Date
August 23, 2011
Inventor
Charles W Koburger III
Delmar
NY, US
David V Horak
Essex Junction
VT, US
Steven J Holmes
Guilderland
NY, US
Mark C Hakey
Fairfax
VT, US
Toshiharu Furukawa
Essex Junction
VT, US
Agent
Richard M Kotulak
Schmeiser Olsen & Watts
Assignee
International Business Machines Corporation
NY, US
IPC
H01L 29/78
H01L 29/423
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