07981473 is referenced by 36 patents and cites 19 patents.

A process in which a wafer is exposed to a first chemically reactive precursor dose insufficient to result in a maximum saturated ALD deposition rate on the wafer, and then to a second chemically reactive precursor dose, the precursors being distributed in a manner so as to provide substantially uniform film deposition. The second chemically reactive precursor dose may likewise be insufficient to result in a maximum saturated ALD deposition rate on the wafer or, alternatively, sufficient to result in a starved saturating deposition on the wafer. The process may or may not include purges between the precursor exposures, or between one set of exposures and not another.

Title
Transient enhanced atomic layer deposition
Application Number
10/791334
Publication Number
7981473 (B2)
Application Date
March 1, 2004
Publication Date
July 19, 2011
Inventor
Sasangan Ramanathan
San Ramon
CA, US
Ana R Londergan
Santa Clara
CA, US
Thomas E Seidel
Sunnyvale
CA, US
Anuranjan Srivastava
Sunnyvale
CA, US
Gi Youl Kim
San Jose
CA, US
Agent
SNR Denton US
Assignee
Aixtron
CA, US
IPC
C23C 16/00
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