07939447 is referenced by 51 patents and cites 144 patents.

A method for depositing a single crystalline silicon film comprises: providing a substrate disposed within a chamber; introducing to the chamber under chemical vapor deposition conditions a silicon precursor, a chlorine-containing etchant and an inhibitor source for decelerating reactions between the silicon precursor and the chlorine-containing etchant; and selectively depositing a doped crystalline Si-containing film onto the substrate.

Title
Inhibitors for selective deposition of silicon containing films
Application Number
11/925518
Publication Number
7939447 (B2)
Application Date
October 26, 2007
Publication Date
May 10, 2011
Inventor
Pierre Tomasini
Tempe
AZ, US
Matthias Bauer
Phoenix
AZ, US
Agent
Knobbe Martens Olson & Bear
Assignee
ASM America
AZ, US
IPC
H01L 21/31
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