07910765 is referenced by 10 patents and cites 26 patents.

Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as low dielectric constant (k) thin films, high k gate silicates, low temperature silicon epitaxial films, and films containing silicon nitride (Si3N4), siliconoxynitride (SiOxNy) and/or silicon dioxide (SiO2). The precursors of the invention are amenable to use in low temperature (e.g., <500° C.) chemical vapor deposition processes, for fabrication of ULSI devices and device structures.

Title
Composition and method for low temperature deposition of silicon-containing films such as films including silicon, silicon nitride, silicon dioxide and/or silicon-oxynitride
Application Number
12/838441
Publication Number
7910765 (B2)
Application Date
July 17, 2010
Publication Date
March 22, 2011
Inventor
Jeffrey F Roeder
Brookfield
CT, US
Bryan C Hendrix
Danbury
CT, US
Thomas H Baum
New Fairfield
CT, US
Ravi K Laxman
San Jose
CA, US
Chongying Xu
New Milford
CT, US
Ziyun Wang
Bethel
CT, US
Agent
Margaret Chappuis
Hultquist IP
Steven J Hultquist
Assignee
Advanced Technology Materials
CT, US
IPC
C07C 7/10
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