07890891 is referenced by 55 patents and cites 48 patents.

A method and apparatus are disclosed for use in improving the gate oxide reliability of semiconductor-on-insulator (SOI) metal-oxide-silicon field effect transistor (MOSFET) devices using accumulated charge control (ACC) techniques. The method and apparatus are adapted to remove, reduce, or otherwise control accumulated charge in SOI MOSFETs, thereby yielding improvements in FET performance characteristics. In one embodiment, a circuit comprises a MOSFET, operating in an accumulated charge regime, and means for controlling the accumulated charge, operatively coupled to the SOI MOSFET. A first determination is made of the effects of an uncontrolled accumulated charge on time dependent dielectric breakdown (TDDB) of the gate oxide of the SOI MOSFET. A second determination is made of the effects of a controlled accumulated charge on TDDB of the gate oxide of the SOI MOSFET. The SOI MOSFET is adapted to have a selected average time-to-breakdown, responsive to the first and second determinations, and the circuit is operated using techniques for accumulated charge control operatively coupled to the SOI MOSFET. In one embodiment, the accumulated charge control techniques include using an accumulated charge sink operatively coupled to the SOI MOSFET body.

Title
Method and apparatus improving gate oxide reliability by controlling accumulated charge
Application Number
11/520912
Publication Number
7890891 (B2)
Application Date
September 14, 2006
Publication Date
February 15, 2011
Inventor
Tae Youn Kim
San Diego
CA, US
Alexander Dribinsky
Naperville
IL, US
Mark L Burgener
San Diego
CA, US
Robert B Welstand
San Diego
CA, US
George P Imthurn
San Diego
CA, US
Clint L Kemerling
Escondido
CA, US
Dylan J Kelly
San Diego
CA, US
Christopher N Brindle
Poway
CA, US
Michael A Stuber
Carlsbad
CA, US
Agent
Larry D Flesner
Martin J Jaquez Esq
Jaquez & Associates
Assignee
Peregrine Semiconductor Corporation
CA, US
IPC
G06F 17/50
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