07868419 is referenced by 29 patents and cites 4 patents.

The present invention relates to using a trap-rich layer, such as a polycrystalline Silicon layer, over a semiconductor substrate to substantially immobilize a surface conduction layer at the surface of the semiconductor substrate at radio frequency (RF) frequencies. The trap-rich layer may have a high density of traps that trap carriers from the surface conduction layer. The average release time from the traps may be longer than the period of any present RF signals, thereby effectively immobilizing the surface conduction layer, which may substantially prevent capacitance and inductance changes due to the RF signals. Therefore, harmonic distortion of the RF signals may be significantly reduced or eliminated. The semiconductor substrate may be a Silicon substrate, a Gallium Arsenide substrate, or another substrate.

Title
Linearity improvements of semiconductor substrate based radio frequency devices
Application Number
12/254499
Publication Number
7868419 (B1)
Application Date
October 20, 2008
Publication Date
January 11, 2011
Inventor
Joseph M Gering
Stokesdale
NC, US
Michael Carroll
Jamestown
NC, US
Thomas Gregory McKay
Boulder Creek
CA, US
Daniel Charles Kerr
Oak Ridge
NC, US
Agent
Withrow & Terranova P L L C
Assignee
RF Micro Devices
NC, US
IPC
H01L 27/08
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