07859047 is referenced by 15 patents and cites 391 patents.

A field effect transistor (FET) includes a plurality of trenches extending into a semiconductor region. Each trench includes a gate electrode and a shield electrode with an inter-electrode dielectric therebetween. A body region extends between each pair of adjacent trenches, and source regions extend in each body region adjacent to the trenches. A first interconnect layer contacts the source and body regions. The plurality of trenches extend in an active region of the FET, and the shield electrode and gate electrode extend out of each trench and into a non-active region of the FET where the shield electrodes and gate electrodes are electrically connected together by a second interconnect layer. The electrical connection between the shield and gate electrodes is made through periodic contact openings formed in a gate runner region of the non-active region.

Title
Shielded gate trench FET with the shield and gate electrodes connected together in non-active region
Application Number
12/268616
Publication Number
7859047 (B2)
Application Date
November 11, 2008
Publication Date
December 28, 2010
Inventor
Paul Thorup
West Jordan
UT, US
Christopher Boguslaw Kocon
Mountaintop
PA, US
Nathan Kraft
Pottsville
PA, US
Agent
Townsend and Townsend and Crew
Assignee
Fairchild Semiconductor Corporation
ME, US
IPC
H01L 31/119
H01L 31/113
H01L 31/062
H01L 29/94
H01L 29/76
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