07825024 is referenced by 80 patents and cites 6 patents.

A method of forming a semiconductor device having a through-silicon via (TSV) is provided. A semiconductor device is provided having a first dielectric layer formed thereon. One or more dielectric layers are formed over the first dielectric layer, such that each of the dielectric layers have a stacking structure, wherein the stacking structures in the one or more dielectric layers are vertically aligned. The stacking structures may be, for example, metal rings. The stacking structures are then removed to form a first recess. A second recess is formed by extending the first recess into the substrate. The second recess is filled with a conductive material to form the TSV.

Title
Method of forming through-silicon vias
Application Number
12/277829
Publication Number
7825024 (B2)
Application Date
November 25, 2008
Publication Date
November 2, 2010
Inventor
Sheng Yuan Lin
Hsin-Chu
TW
Ching Kun Huang
Chubei
TW
Song Bor Lee
Zhubei
TW
Chuan Yi Lin
Hsin-Chu
TW
Agent
Slater & Matsil L
Assignee
Taiwan Semiconductor Manufacturing Company
TW
IPC
H01L 21/4763
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