07811881 is referenced by 79 patents and cites 9 patents.

A semiconductor structure including a trench formed in a substrate and a buried isolation collar that extends about sidewalls of the trench. The buried isolation collar is constituted by an insulator formed from a buried porous region of substrate material. The porous region is formed from a buried doped region defined using masking and ion implantation or by masking the trench sidewalls and using dopant diffusion. Advantageously, the porous region is transformed to an oxide insulator by an oxidation process. The semiconductor structure may be a storage capacitor of a memory cell further having a buried plate about the trench and a capacitor node inside the trench that is separated from the buried plate by a node dielectric formed on the trench sidewalls.

Title
Methods for forming semiconductor structures with buried isolation collars and semiconductor structures formed by these methods
Application Number
12/125357
Publication Number
7811881 (B2)
Application Date
May 22, 2008
Publication Date
October 12, 2010
Inventor
Jack Allan Mandelman
Flat Rock
NC, US
Kangguo Cheng
Guilderland
NY, US
Agent
Wood Herron & Evans
Assignee
International Business Machines Corporation
NY, US
IPC
H01L 21/8242
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