07786320 is referenced by 16 patents and cites 24 patents.

Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as low dielectric constant (k) thin films, high k gate silicates, low temperature silicon epitaxial films, and films containing silicon nitride (Si3N4), siliconoxynitride (SiOxNy) and/or silicon dioxide (SiO2). The precursors of the invention are amenable to use in low temperature (e.g., <500° C.) chemical vapor deposition processes, for fabrication of ULSI devices and device structures.

Title
Composition and method for low temperature deposition of silicon-containing films such as films including silicon, silicon nitride, silicon dioxide and/or silicon-oxynitride
Application Number
12/464726
Publication Number
7786320 (B2)
Application Date
May 12, 2009
Publication Date
August 31, 2010
Inventor
Jeffrey F Roeder
Brookfield
CT, US
Bryan C Hendrix
Danbury
CT, US
Thomas H Baum
New Fairfield
CT, US
Ravi K Laxman
San Jose
CA, US
Chongying Xu
New Milford
CT, US
Ziyun Wang
Bethel
CT, US
Agent
Maggie Chappuis
Intellectual Property Technology Law
Steven J Hultquist
Assignee
Advanced Technology Materials
CT, US
IPC
C07F 7/02
View Original Source