07782577 cites 20 patents.

A magnetic random access memory structure comprising an anti-ferromagnetic layer structure, a crystalline ferromagnetic structure physically coupled to the anti-ferromagnetic layer structure and a ferromagnetic free layer structure physically coupled to the crystalline ferromagnetic structure.

Title
MRAM structure using sacrificial layer for anti-ferromagnet and method of manufacture
Application Number
11/448170
Publication Number
7782577 (B2)
Application Date
June 6, 2006
Publication Date
August 24, 2010
Inventor
Ulrich Klostermann
Fontainebleau
FR
Wolfgang Raberg
Fontainebleau
FR
Assignee
ALTIS Semiconductor SNC
FR
Infineon Technologies
DE
IPC
G11B 5/33
G11B 5/127
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