07696540 is referenced by 15 patents and cites 38 patents.

An apparatus and method for a fast recovery rectifier structure. Specifically, the structure includes a substrate of a first dopant. A first epitaxial layer lightly doped with the first dopant is coupled to the substrate. A first metallization layer is coupled to the first epitaxial layer. A plurality of trenches is recessed into the first epitaxial layer, each of which is coupled to the metallization layer. The device also includes a plurality of wells each doped with a second dopant type, wherein each well is formed beneath and adjacent to a corresponding trench. A plurality of oxide layers is formed on walls and a bottom of a corresponding trench. A plurality of channel regions doped with the first dopant is formed within the first epitaxial layer between two corresponding wells. Each of the plurality of channel regions is more highly doped with the first dopant than the first epitaxial layer.

Title
Structure and method for a fast recovery rectifier structure
Application Number
11/644578
Publication Number
7696540 (B2)
Application Date
December 22, 2006
Publication Date
April 13, 2010
Inventor
Hy Hoang
Santa Clara
CA, US
Eric Johnson
Santa Clara
CA, US
Yang Yu Fan
Sunnyvale
CA, US
Richard Francis
Los Gatos
CA, US
Agent
Morgan Lewis & Bockius
Assignee
Qspeed Semiconductor
CA, US
IPC
H01L 29/80
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