07651947 is referenced by 2 patents and cites 8 patents.

Methods of forming a mask for implanting a substrate and implanting using an implant stopping layer with a photoresist provide lower aspect ratio masks that cause minimal damage to trench isolations in the substrate during removal of the mask. In one embodiment, a method of forming a mask includes: depositing an implant stopping layer over the substrate; depositing a photoresist over the implant stopping layer, the implant stopping layer having a density greater than the photoresist; forming a pattern in the photoresist by removing a portion of the photoresist to expose the implant stopping layer; and transferring the pattern into the implant stopping layer by etching to form the mask. The implant stopping layer may include: hydrogenated germanium carbide, nitrogenated germanium carbide, fluorinated germanium carbide, and/or amorphous germanium carbon hydride (GeHX), where X includes carbon. The methods/mask reduce scattering during implanting because the mask has higher density than conventional masks.

Title
Mask forming and implanting methods using implant stopping layer and mask so formed
Application Number
11/420321
Publication Number
7651947 (B2)
Application Date
May 25, 2006
Publication Date
January 26, 2010
Inventor
Ryan P Deschner
Poughkeepsie
NY, US
Richard A Conti
Katonach
NY, US
Todd C Bailey
Poughkeepsie
NY, US
Katherina Babich
Chappaqua
NY, US
Agent
Hoffman Warnick
Wenjie Li
Assignee
International Business Machines Corporation
NY, US
IPC
H01L 21/302
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