07602032 is referenced by 4 patents and cites 11 patents.

A memory and method of making a memory is disclosed. In one embodiment, the memory includes a cap structure for a magnetoresistive random access memory device including an etch stop layer formed over an upper magnetic layer of a magnetoresistive junction (MTJ/MCJ) layered structure and a hardmask layer formed over said etch stop layer, wherein said etch stop layer is selected from a material such that an etch chemistry used for removing said hardmask layer has selectivity against etching said etch stop layer material. In a method of opening the hardmask layer, an etch process to remove exposed portions of the hardmask layer is implemented, where the etch process terminates on the etch stop layer.

Title
Memory having cap structure for magnetoresistive junction and method for structuring the same
Application Number
11/117854
Publication Number
7602032 (B2)
Application Date
April 29, 2005
Publication Date
October 13, 2009
Inventor
Wolfgang Raberg
Fontainebleau
FR
Chanro Park
Samois sur Seine
FR
Ulrich Klostermann
Fontainebleau
FR
Agent
Dicke Billig & Czaja PLLC
Assignee
Infineone Technologies
DE
Altis Semiconductor SNC
IPC
H01L 29/82
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