07582519 is referenced by 23 patents and cites 419 patents.

A semiconductor structure is formed as follows. A semiconductor region is formed to have a P-type region and a N-type region forming a PN junction therebetween. A first trench is formed extending in the semiconductor region adjacent at least one of the P-type and N-type regions is formed. At least one diode is formed in the trench.

Title
Method of forming a trench structure having one or more diodes embedded therein adjacent a PN junction
Application Number
11/487015
Publication Number
7582519 (B2)
Application Date
July 14, 2006
Publication Date
September 1, 2009
Inventor
Joseph Andrew Yedinak
Mountain Top
PA, US
Christopher Boguslaw Kocon
Mountain Top
PA, US
Agent
Townsend and Townsend and Crew
Assignee
Fairchild Semiconductor Corporation
ME, US
IPC
H01L 29/72
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