07576388 is referenced by 67 patents and cites 363 patents.

MOSFET devices for RF applications that use a trench-gate in place of the lateral gate conventionally used in lateral MOSFET devices. A trench-gate provides devices with a single, short channel for high frequency gain. Embodiments of the present invention provide devices with an asymmetric oxide in the trench gate, as well as LDD regions that lower the gate-drain capacitance for improved RF performance. Refinements to these TG-LDMOS devices include placing a source-shield conductor below the gate and placing two gates in a trench-gate region. These improve device high-frequency performance by decreasing gate-to-drain capacitance. Further refinements include adding a charge balance region to the LDD region and adding source-to-substrate or drain-to-substrate vias.

Title
Trench-gate LDMOS structures
Application Number
10/951259
Publication Number
7576388 (B1)
Application Date
September 26, 2004
Publication Date
August 18, 2009
Inventor
Steven Sapp
Felton
CA, US
Peter H Wilson
Boulder Creek
CA, US
Agent
Townsend and Townsend and Crew
Assignee
Fairchild Semiconductor Corporation
ME, US
IPC
H01L 29/78
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