07560784 is referenced by 41 patents and cites 8 patents.

Embodiments of the invention generally relate to the field of semiconductor devices, and more specifically to fin-based junction diodes. A portion of a doped semiconductor fin may protrude through a first doped layer. An intrinsic layer may be disposed on the protruding semiconductor fin. A second semiconductor layer may be disposed on the intrinsic layer, thereby forming a PIN diode compatible with FinFET technology and having increased junction area.

Title
Fin PIN diode
Application Number
11/669970
Publication Number
7560784 (B2)
Application Date
February 1, 2007
Publication Date
July 14, 2009
Inventor
Jack Allan Mandelman
Flat Rock
NC, US
Louis Lu Chen Hsu
Fishkill
NY, US
Kangguo Cheng
Beacon
NY, US
Agent
Patterson & Sheridan
Assignee
International Business Machines Corporation
NY, US
IPC
H01L 29/76
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