07558109 is referenced by 198 patents and cites 54 patents.

Data is read from a nonvolatile memory array using one or more read voltages that are adjusted during memory life. Programming target voltages and read voltages may be adjusted together over memory life to map memory states to an increasingly wide threshold window. Individual memory states are mapped to sub-ranges that are made wider, reducing errors.

Title
Nonvolatile memory with variable read threshold
Application Number
11/556626
Publication Number
7558109 (B2)
Application Date
November 3, 2006
Publication Date
July 7, 2009
Inventor
Kevin M Conley
San Jose
CA, US
Yigal Brandman
Los Altos Hills
CA, US
Agent
Weaver Austin Villeneuve Sampson
Assignee
SanDisk Corporation
CA, US
IPC
G11C 16/04
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