07531036 is referenced by 3 patents and cites 22 patents.

The present invention provides a single crystal heat treatment method, having a step of heating a single crystal of a cerium-doped silicate compound represented by any of general formulas (1) to (4) below in an oxygen-containing atmosphere Y2−(x+y)LnxCeySiO5  (1) (wherein Ln represents at least one elemental species selected from a group consisting of elements belonging to the rare earth elements, x represents a numerical value from 0 to 2, and y represents a numerical value greater than 0 but less than or equal to 0.2) Gd2−(z+w)LnzCewSiO5  (2) (wherein Ln represents at least one elemental species selected from a group consisting of elements belonging to the rare earth elements, z represents a numerical value greater than 0 but less than or equal to 2, and w represents a numerical value greater than 0 but less than or equal to 0.2) Gd2-(p+q)LnpCeqSiO5  (3) (wherein Ln represents at least one elemental species selected from a group consisting of Dy, Ho, Er, Tm, Yb, Lu, Y and Sc, which are rare earth elements having an ionic radius smaller than Tb, p represents a numerical value greater than 0 but less than or equal to 2, and q represents a numerical value greater than 0 but less than or equal to 0.2) Gd2−(r+s)LurCesSiO5  (4) (wherein r represents a numerical value greater than 0 but less than or equal to 2, and s represents a numerical value greater than 0 but less than or equal to 0.2).

Title
Single crystal heat treatment method
Application Number
11/374435
Publication Number
7531036 (B2)
Application Date
March 14, 2006
Publication Date
May 12, 2009
Inventor
Kazuhisa Kurashige
Hitachinaka
JP
Tatsuya Usui
Hitachinaka
JP
Yasushi Kurata
Hitachinaka
JP
Naoaki Shimura
Hitachinaka
JP
Agent
Westerman Hattori Daniels & Adrian
Assignee
Hitachi Chemical Company
JP
IPC
C30B 21/06
C30B 15/14
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