07511339 is referenced by 16 patents and cites 162 patents.

A trenched field effect transistor is provided that includes (a) a semiconductor substrate, (b) a trench extending a predetermined depth into the semiconductor substrate, (c) a pair of doped source junctions, positioned on opposite sides of the trench, (d) a doped heavy body positioned adjacent each source junction on the opposite side of the source junction from the trench, the deepest portion of the heavy body extending less deeply into said semiconductor substrate than the predetermined depth of the trench, and (e) a doped well surrounding the heavy body beneath the heavy body.

Title
Field effect transistor and method of its manufacture
Application Number
10/630249
Publication Number
7511339 (B2)
Application Date
July 30, 2003
Publication Date
March 31, 2009
Inventor
Dean E Probst
West Jordan
UT, US
Izak Bencuya
Saratoga
CA, US
Steven Sapp
Felton
CA, US
Duc Chau
San Jose
CA, US
Brian S Mo
Fremont
CA, US
Agent
Townsend and Townsend and Crew
Assignee
Fairchild Semiconductor Corporation
MA, US
IPC
H01L 29/78
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