07510928 is referenced by 28 patents and cites 20 patents.

A portion of a conductive layer (310, 910) provides a capacitor electrode (310.0, 910.0). Dielectric trenches (410, 414, 510) are formed in the conductive layer to insulate the capacitor electrode from those portions of the conductive layer which are used for conductive paths passing through the electrode but insulated from the electrode. Capacitor dielectric (320) can be formed by anodizing tantalum while a nickel layer (314) protects an underlying copper (310) from the anodizing solution. This protection allows the tantalum layer to be made thin to obtain large capacitance. Chemical mechanical polishing of a layer (610) is made faster, and hence possibly less expensive, by first patterning the layer photolithographically to form, and/or increase in height, upward protrusions of this layer.

Title
Dielectric trenches, nickel/tantalum oxide structures, and chemical mechanical polishing techniques
Application Number
11/418801
Publication Number
7510928 (B2)
Application Date
May 5, 2006
Publication Date
March 31, 2009
Inventor
James J Roman
Sunnyvale
CA, US
Valentin Kosenko
Palo Alto
CA, US
Sergey Savastiouk
San Jose
CA, US
Agent
Michael Shenker
Haynes and Boone
Assignee
Tru Si Technologies
CA, US
IPC
H01L 21/8234
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