07498272 is referenced by 1 patents and cites 5 patents.

The present invention concerns a process for depositing rare earth oxide thin films, especially yttrium, lanthanum and gadolinium oxide thin films by an ALD process, according to which invention the source chemicals are cyclopentadienyl compounds or rare earth metals, especially those of yttrium, lanthanum and gadolinium. Suitable deposition temperatures for yttrium oxide are between 200 and 400° C. when the deposition pressure is between 1 and 50 mbar. Most suitable deposition temperatures for lanthanum oxide are between 160 and 165° C. when the deposition pressure is between 1 and 50 mbar.

Title
Method of depositing rare earth oxide thin films
Application Number
11/24515
Publication Number
7498272 (B2)
Application Date
December 28, 2004
Publication Date
March 3, 2009
Inventor
Markku Leskelä
Espoo
FI
Antti Niskanen
Helsinki
FI
Petri Räisänen
Berkeley Heights
NJ, US
Mikko Ritala
Espoo
FI
Matti Putkonen
Helsinki
FI
Jaakko Niinistö
Helsinki
FI
Agent
Knobbe Martens Olson & Bear
Assignee
ASM International
NL
IPC
H01L 21/44
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