07449778 is referenced by 19 patents and cites 9 patents.

A power semiconductor module (41) as H-bridge circuit (42) has four power semiconductor chips (N1, N2, P1, P2) and a semiconductor control chip (IC). The semiconductor chips (N1, N2, P1, P2, IC) are arranged on three mutually separate large-area lead chip contact areas (43 to 45) of a lead plane (80). The semiconductor control chip (IC) is arranged on a centrally arranged lead chip contact area (45). An n-channel power semiconductor chip (N1, N2) as low-side switch (58, 59) and a p-channel power semiconductor chip (P1, P2) as high-side switch (48, 49) are in each case arranged on two laterally arranged lead chip contact areas (43, 44). The n-channel power semiconductor chips (N1, N2) are jointly at an earth potential (50) and the p-channel power semiconductor chips (P1, P2) are electrically connected to separate supply voltage sources (VS1, VS2).

Title
Power semiconductor module as H-bridge circuit and method for producing the same
Application Number
11/740630
Publication Number
7449778 (B2)
Application Date
April 26, 2007
Publication Date
November 11, 2008
Inventor
Rainald Sander
Munich
DE
Agent
Coats & Bennett P L L C
Assignee
Infineon Technologies Austria
AT
IPC
H01L 23/48
H01L 23/34
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