07447068 is referenced by 105 patents and cites 3 patents.

A method for programming a MLC memory is provided. The MLC memory has a number of bits, and each bit has a number of programmed states. Each programmed state has a first PV level. The method comprises programming the bits of the memory having a Vt level lower than the first PV level of the targeted programmed state such that at least one bit of them has a Vt level larger than a second PV level corresponding to a targeted programmed state, wherein the second PV level of the targeted programmed state is larger than the corresponding first PV level; and programming only the bits of the memory with a Vt level lower than the first PV level of the targeted programmed state such that each of them has a Vt level larger than the first PV level of the targeted programmed state.

Title
Method for programming a multilevel memory
Application Number
11/723352
Publication Number
7447068 (B2)
Application Date
March 19, 2007
Publication Date
November 4, 2008
Inventor
Yung Feng Lin
Taoyuan
TW
Fu Kai Tsai
Taipei
TW
Agent
Birch Stewart Kolasch & Birch
Assignee
Macronix International
TW
IPC
G11C 16/04
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