07436021 is referenced by 15 patents and cites 11 patents.

A power MOSFET 100 has a source metal 112 that contacts silicided source regions 114 through vias 160 etched in an insulating layer 200. The silicide layer 225 provides for a relatively small but highly conductive contact and thus reduces RDSON. The insulating material may be any suitable material including and not limited to one or a combination of materials such as BPSG, PSG, silicon dioxide and silicon nitride. The insulating layer is relatively thin and does not extend deeply into the gate trench.

Title
Dense trench MOSFET with decreased etch sensitivity to deposition and etch processing
Application Number
10/618067
Publication Number
7436021 (B2)
Application Date
July 11, 2003
Publication Date
October 14, 2008
Inventor
Gary M Dolny
Mountaintop
PA, US
Rodney S Ridley
Mountaintop
PA, US
Jifa Hao
Mountaintop
PA, US
Agent
Hiscock & Barclay
Robert D Lott Esq
Assignee
Fairchild Semiconductor Corporation
ME, US
IPC
H01L 29/94
H01L 29/76
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