07423300 is referenced by 102 patents and cites 194 patents.

A memory device. An array of memory elements is formed on a semiconductor chip. A parallel array of word lines extends in a first direction, connecting each memory element to a data source, and a parallel array of bit lines extends in a second direction, connecting each memory element to a data source, the second direction forming an acute angle to the first direction. The connection between each bit line and each memory element is a phase change element composed of memory material having at least two solid phases.

Title
Single-mask phase change memory element
Application Number
11/420107
Publication Number
7423300 (B2)
Application Date
May 24, 2006
Publication Date
September 9, 2008
Inventor
Shih Hung Chen
Elmsford
NY, US
Yi Chou Chen
Cupertino
CA, US
Rich Liu
Jhubei
TW
Hsiang Lan Lung
Elmsford
NY, US
Agent
Haynes Beffel & Wolfeld
Assignee
Macronix International
TW
IPC
H01L 29/40
H01L 23/52
H01L 23/48
H01L 29/768
H01L 27/148
H01L 23/58
H01L 29/73
H01L 27/10
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