07420201 is referenced by 58 patents and cites 476 patents.

The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.

Title
Strained-semiconductor-on-insulator device structures with elevated source/drain regions
Application Number
11/125507
Publication Number
7420201 (B2)
Application Date
May 10, 2005
Publication Date
September 2, 2008
Inventor
Eugene A Fitzgerald
Windham
NH, US
Anthony J Lochtefeld
Somerville
MA, US
Richard Hammond
Harriseahead
GB
Matthew T Currie
Brookline
MA, US
Thomas A Langdo
Cambridge
MA, US
Agent
Goodwin Procter
Assignee
AmberWave Systems Corporation
NH, US
IPC
H01L 21/336
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