07351648 is referenced by 120 patents and cites 4 patents.

Methods for fabricating a semiconductor device include forming a first layer on an underlying layer, forming a hardmask on the first layer, and patterning holes through the hardmask and first layer. An overhang is formed extending over sides of the holes. A conformal layer is deposited over the overhang and in the holes until the conformal layer closes off the holes to form a void/seam in each hole. The void/seam in each hole is exposed by etching back a top surface. The void/seam in each hole is extended to the underlying layer.

Title
Methods for forming uniform lithographic features
Application Number
11/335372
Publication Number
7351648 (B2)
Application Date
January 19, 2006
Publication Date
April 1, 2008
Inventor
Chung Hon Lam
Peekskill
NY, US
Charles W Koburger III
Delmar
NY, US
David V Horak
Essex Junction
VT, US
Steven J Holmes
Guilderland
NY, US
Mark Charles Hakey
Fairfax
VT, US
Toshiharu Furukawa
Essex Junction
VT, US
Agent
Keusey Tutunjian & Bitetto P C
Assignee
International Business Machines Corporation
NY, US
IPC
H01L 21/76
H01L 21/44
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