07339110 is referenced by 114 patents and cites 10 patents.

A solar cell that is readily manufactured using processing techniques which are less expensive than microelectronic circuit processing. In preferred embodiments, printing techniques are utilized in selectively forming masks for use in etching of silicon oxide and diffusing dopants and in forming metal contacts to diffused regions. In a preferred embodiment, p-doped regions and n-doped regions are alternately formed in a surface of the wafer in offset levels through use of masking and etching techniques. Metal contacts are made to the p-regions and n-regions by first forming a seed layer stack that comprises a first layer such as aluminum that contacts silicon and functions as an infrared reflector, second layer such titanium tungsten that acts as diffusion barrier, and a third layer functions as a plating base. A thick conductive layer such as copper is then plated over the seed layer, and the seed layer between plated lines is removed. A front surface of the wafer is preferably textured by etching or mechanical abrasion with an antireflection layer provided over the textured surface. A field layer can be provided in the textured surface with the combined effect being a very low surface recombination velocity.

Title
Solar cell and method of manufacture
Application Number
10/412638
Publication Number
7339110 (B1)
Application Date
April 10, 2003
Publication Date
March 4, 2008
Inventor
Richard M Swanson
Los Altos
CA, US
Keith McIntosh
Newport Beach
AU
Neil Kaminar
Boulder Creek
CA, US
David Smith
San Jose
CA, US
Thomas Pass
San Jose
CA, US
Michael J Cudzinovic
Sunnyvale
CA, US
William P Mulligan
San Jose
CA, US
Agent
Okamoto & Benedicto
Assignee
SunPower Corporation
CA, US
IPC
H01L 31/00
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