07321509 is referenced by 74 patents and cites 64 patents.

Shifts in the apparent charge stored on a floating gate (or other charge storing element) of a non-volatile memory cell can occur because of the coupling of an electric field based on the charge stored in adjacent floating gates (or other adjacent charge storing elements). The problem occurs most pronouncedly between sets of adjacent memory cells that have been programmed at different times. To compensate for this coupling, the read process for a given memory cell will take into account the programmed state of an adjacent memory cell.

Title
Compensating for coupling in non-volatile storage
Application Number
11/675632
Publication Number
7321509 (B2)
Application Date
February 16, 2007
Publication Date
January 22, 2008
Inventor
Gertjan Hemink
Yokohama
JP
Raul Adrian Cernea
Santa Clara
CA, US
Jian Chen
San Jose
CA, US
Agent
Vierra Magen Marcus & DeNiro
Assignee
Sandisk Corporation
CA, US
IPC
G11C 11/34
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