07321130 is referenced by 117 patents and cites 109 patents.

A memory device comprising a first electrode having a top side, a second electrode having a top side and an insulating member between the first electrode and the second electrode. The insulating member has a thickness between the first and second electrodes near the top side of the first electrode and the top side of the second electrode. A bridge of memory material crosses the insulating member, and defines an inter-electrode path between the first and second electrodes across the insulating member. An array of such memory cells is provided. In the array, a plurality of electrode members and insulating members therebetween comprise an electrode layer on an integrated circuit. The bridges of memory material have sub-lithographic dimensions.

Title
Thin film fuse phase change RAM and manufacturing method
Application Number
11/155067
Publication Number
7321130 (B2)
Application Date
June 17, 2005
Publication Date
January 22, 2008
Inventor
Shih Hung Chen
Elmsford
NY, US
Hsiang Lan Lung
Elmsford
NY, US
Agent
Haynes Beffel & Wolfeld
Assignee
Macronix International
TW
IPC
G11C 11/00
H01L 47/00
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