07310272 is referenced by 90 patents and cites 76 patents.

Errors can occur when reading the threshold voltage of a programmed non-volatile storage element due to at least two mechanisms: (1) capacitive coupling between neighboring floating gates and (2) changing conductivity of the channel area after programming (referred to as back pattern effect). To account for coupling between neighboring floating gates, the read process for a particular memory cell will provide compensation to an adjacent memory cell in order to reduce the coupling effect that the adjacent memory cell has on the particular memory cell. To account for the back pattern effect, a first voltage is used during a verify operation for unselected word lines that have been subjected to a programming operation and a second voltage is used for unselected word lines that have not been subjected to a programming operation. The combination of these two techniques provides for more accurate storage and retrieval of data.

Title
System for performing data pattern sensitivity compensation using different voltage
Application Number
11/421884
Publication Number
7310272 (B1)
Application Date
June 2, 2006
Publication Date
December 18, 2007
Inventor
Yingda Dong
Sunnyvale
CA, US
Nima Mokhlesi
Los Gatos
CA, US
Agent
Vierra Magen Marcus & DeNiro
Assignee
Sandisk Corporation
CA, US
IPC
G11C 16/04
G11C 16/06
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