07297608 is referenced by 56 patents and cites 72 patents.

A method employing atomic layer deposition rapid vapor deposition (RVD) conformally deposits a dielectric material on small features of a substrate surface. The resulting dielectric film is then annealed using a high density plasma (HDP) at a temperature under 500° C. in an oxidizing environment. The method includes the following three principal operations: exposing a substrate surface to an aluminum-containing precursor gas to form a substantially saturated layer of aluminum-containing precursor on the substrate surface; exposing the substrate surface to a silicon-containing precursor gas to form the dielectric film; and annealing the dielectric film in a low temperature oxygen-containing high density plasma. The resulting film has improved mechanical properties, including minimized seams, improved WERR, and low intrinsic stress, comparable to a high temperature annealing process (˜800° C.), but without exceeding the thermal budget limitations of advanced devices.

Title
Method for controlling properties of conformal silica nanolaminates formed by rapid vapor deposition
Application Number
10/874696
Publication Number
7297608 (B1)
Application Date
June 22, 2004
Publication Date
November 20, 2007
Inventor
Bunsen Nie
Fremont
CA, US
Adrianne K Tipton
Fremont
CA, US
Jeff Tobin
Mountain View
CA, US
Dennis M Hausmann
Los Gatos
CA, US
Ron Rulkens
Milpitas
CA, US
Raihan M Tarafdar
San Jose
CA, US
George D Papasouliotis
Cupertino
CA, US
Agent
Beyer Weaver
Assignee
Novellus Systems
CA, US
IPC
H01L 21/76
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